STW56N65DM2

Part Number
STW56N65DM2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 48A TO247
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-247-3
Power Dissipation (Max) 360W (Tc)
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Vgs (Max) ±25V
Drain to Source Voltage (Vdss) 650 V
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-247-3
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
Rds On (Max) @ Id, Vgs 65mOhm @ 24A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 100 V

Goods in stock:2517

Can be shipped immediately
quantity unit price price
1 USD $11.54 USD $11.54
Total Amount: USD $11.54

Tube

quantity unit price price
1 $11.54 $11.54
30 $7.03 $210.9
120 $6.82 $818.4
510 $6.68 $3406.8