STW20NM65N

Part Number
STW20NM65N
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 19A TO247-3
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Package / Case TO-247-3
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±25V
Power Dissipation (Max) 160W (Tc)
Drain to Source Voltage (Vdss) 650 V
Supplier Device Package TO-247-3
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 50 V
Rds On (Max) @ Id, Vgs 190mOhm @ 9.5A, 10V

Goods in stock:1600

Can be shipped immediately