STW19NM65N

Part Number
STW19NM65N
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 15.5A TO247-3
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Power Dissipation (Max) 150W (Tc)
Package / Case TO-247-3
Operating Temperature 150°C (TJ)
Vgs (Max) ±25V
Drain to Source Voltage (Vdss) 650 V
Supplier Device Package TO-247-3
Current - Continuous Drain (Id) @ 25°C 15.5A (Tc)
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 50 V
Rds On (Max) @ Id, Vgs 270mOhm @ 7.75A, 10V

Goods in stock:1600

Can be shipped immediately