STU9N60M2

Part Number
STU9N60M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 5.5A IPAK
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Power Dissipation (Max) 60W (Tc)
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±25V
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Supplier Device Package TO-251 (IPAK)
Rds On (Max) @ Id, Vgs 780mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 320 pF @ 100 V

Goods in stock:3373

Can be shipped immediately
quantity unit price price
1 USD $1.91 USD $1.91
Total Amount: USD $1.91

Tube

quantity unit price price
1 $1.91 $1.91
75 $0.84 $63
150 $0.73 $109.5
525 $0.66 $346.5
1050 $0.59 $619.5
2025 $0.58 $1174.5
5025 $0.53 $2663.25
10050 $0.52 $5226