STU9HN65M2

Part Number
STU9HN65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 5.5A IPAK
Specification document

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Power Dissipation (Max) 60W (Tc)
Operating Temperature 150°C (TJ)
Vgs (Max) ±25V
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Drain to Source Voltage (Vdss) 650 V
Supplier Device Package TO-251 (IPAK)
Gate Charge (Qg) (Max) @ Vgs 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 100 V
Rds On (Max) @ Id, Vgs 820mOhm @ 2.5A, 10V

Goods in stock:3945

Can be shipped immediately
quantity unit price price
1 USD $1.58 USD $1.58
Total Amount: USD $1.58

Tube

quantity unit price price
1 $1.58 $1.58
75 $0.71 $53.25
150 $0.63 $94.5
525 $0.53 $278.25
1050 $0.48 $504
2025 $0.46 $931.5