STU7N65M2

Part Number
STU7N65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 5A IPAK
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) 60W (Tc)
Vgs (Max) ±25V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Drain to Source Voltage (Vdss) 650 V
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Supplier Device Package TO-251 (IPAK)
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 100 V
Rds On (Max) @ Id, Vgs 1.15Ohm @ 2.5A, 10V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
3000 USD $0.64 USD $1,920.00
Total Amount: USD $1,920.00

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quantity unit price price
3000 $0.64 $1920