STU6N65M2

Part Number
STU6N65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 4A IPAK
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Power Dissipation (Max) 60W (Tc)
Vgs (Max) ±25V
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Drain to Source Voltage (Vdss) 650 V
Supplier Device Package TO-251 (IPAK)
Gate Charge (Qg) (Max) @ Vgs 9.8 nC @ 10 V
Rds On (Max) @ Id, Vgs 1.35Ohm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 226 pF @ 100 V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
1 USD $1.39 USD $1.39
Total Amount: USD $1.39

Tube

quantity unit price price
1 $1.39 $1.39
75 $0.5 $37.5
150 $0.49 $73.5
525 $0.47 $246.75
1050 $0.47 $493.5
2025 $0.45 $911.25
5025 $0.44 $2211