STU1HN60K3

Part Number
STU1HN60K3
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 1.2A IPAK
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±30V
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Power Dissipation (Max) 27W (Tc)
Current - Continuous Drain (Id) @ 25°C 1.2A (Tc)
Vgs(th) (Max) @ Id 4.5V @ 50µA
Supplier Device Package TO-251 (IPAK)
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 10 V
Rds On (Max) @ Id, Vgs 8Ohm @ 600mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 50 V

Goods in stock:3499

Can be shipped immediately
quantity unit price price
1 USD $1.45 USD $1.45
Total Amount: USD $1.45

Tube

quantity unit price price
1 $1.45 $1.45
75 $0.64 $48
150 $0.58 $87
525 $0.48 $252
1050 $0.44 $462