STU16N60M2

Part Number
STU16N60M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 12A IPAK
Specification document

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±25V
Power Dissipation (Max) 110W (Tc)
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Supplier Device Package TO-251 (IPAK)
Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 100 V

Goods in stock:1600

Can be shipped immediately