STU10NM65N

Part Number
STU10NM65N
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 9A IPAK
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±25V
Supplier Device Package IPAK
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 90W (Tc)
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 50 V
Rds On (Max) @ Id, Vgs 480mOhm @ 4.5A, 10V

Goods in stock:1600

Can be shipped immediately