STU10NM60N

Part Number
STU10NM60N
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 10A IPAK
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±25V
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Power Dissipation (Max) 70W (Tc)
Supplier Device Package TO-251 (IPAK)
Rds On (Max) @ Id, Vgs 550mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 50 V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
3000 USD $1.53 USD $4,590.00
Total Amount: USD $4,590.00

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quantity unit price price
3000 $1.53 $4590