STP9N65M2

Part Number
STP9N65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 5A TO220
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Package / Case TO-220-3
Power Dissipation (Max) 60W (Tc)
Supplier Device Package TO-220
Operating Temperature 150°C (TJ)
Vgs (Max) ±25V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drain to Source Voltage (Vdss) 650 V
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 100 V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
1000 USD $0.92 USD $920.00
Total Amount: USD $920.00

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quantity unit price price
1000 $0.92 $920