STP80N1K1K6

Part Number
STP80N1K1K6
Manufacturer STMicroelectronics
Other part numbers
Description Linear IC's
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Vgs (Max) ±30V
Power Dissipation (Max) 62W (Tc)
Gate Charge (Qg) (Max) @ Vgs 5.7 nC @ 10 V
Vgs(th) (Max) @ Id 4V @ 50µA
Rds On (Max) @ Id, Vgs 1.1Ohm @ 1.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 400 V

Goods in stock:2493

Can be shipped immediately
quantity unit price price
1 USD $2.72 USD $2.72
Total Amount: USD $2.72

Tube

quantity unit price price
1 $2.72 $2.72
10 $1.64 $16.4
100 $1.2 $120
500 $0.96 $480
1000 $0.88 $880
2000 $0.82 $1640
5000 $0.77 $3850