STP4NB80

Part Number
STP4NB80
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 800V 4A TO220AB
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Package / Case TO-220-3
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Supplier Device Package TO-220
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 100W (Tc)
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 25 V
Vgs(th) (Max) @ Id 5V @ 250µA
Rds On (Max) @ Id, Vgs 3.3Ohm @ 2A, 10V

Goods in stock:1600

Can be shipped immediately