STP35N65DM2

Part Number
STP35N65DM2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 32A TO220
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-220
Vgs (Max) ±25V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drain to Source Voltage (Vdss) 650 V
Vgs(th) (Max) @ Id 5V @ 250µA
Power Dissipation (Max) 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds 2540 pF @ 100 V
Rds On (Max) @ Id, Vgs 110mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs 56.3 nC @ 10 V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
1000 USD $2.98 USD $2,980.00
Total Amount: USD $2,980.00

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quantity unit price price
1000 $2.98 $2980