STP33N65M2

Part Number
STP33N65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 24A TO220
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Package / Case TO-220-3
Supplier Device Package TO-220
Power Dissipation (Max) 190W (Tc)
Operating Temperature 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Vgs (Max) ±25V
Drain to Source Voltage (Vdss) 650 V
Gate Charge (Qg) (Max) @ Vgs 41.5 nC @ 10 V
Rds On (Max) @ Id, Vgs 140mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1790 pF @ 100 V

Goods in stock:1657

Can be shipped immediately
quantity unit price price
1 USD $5.23 USD $5.23
Total Amount: USD $5.23

Tube

quantity unit price price
1 $5.23 $5.23
50 $2.7 $135
100 $2.46 $246
500 $2.03 $1015
1000 $1.89 $1890
2000 $1.88 $3760