STP26N65DM2

Part Number
STP26N65DM2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 20A TO220
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-220
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Vgs (Max) ±25V
Power Dissipation (Max) 170W (Tc)
Drain to Source Voltage (Vdss) 650 V
Vgs(th) (Max) @ Id 5V @ 250µA
Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 100 V

Goods in stock:2458

Can be shipped immediately
quantity unit price price
1 USD $4.59 USD $4.59
Total Amount: USD $4.59

Tube

quantity unit price price
1 $4.59 $4.59
10 $3.02 $30.2
100 $2.13 $213
500 $1.75 $875
1000 $1.62 $1620
2000 $1.59 $3180