STP18N65M2

Part Number
STP18N65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 12A TO220
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Package / Case TO-220-3
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Supplier Device Package TO-220
Operating Temperature 150°C (TJ)
Vgs (Max) ±25V
Power Dissipation (Max) 110W (Tc)
Drain to Source Voltage (Vdss) 650 V
Rds On (Max) @ Id, Vgs 330mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 770 pF @ 100 V

Goods in stock:2599

Can be shipped immediately
quantity unit price price
1 USD $2.92 USD $2.92
Total Amount: USD $2.92

Tube

quantity unit price price
1 $2.92 $2.92
50 $1.62 $81
100 $1.59 $159
500 $1.31 $655
1000 $1.21 $1210
2000 $1.13 $2260
5000 $1.12 $5600