STP18N60DM2

Part Number
STP18N60DM2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 12A TO220
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Package / Case TO-220-3
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Supplier Device Package TO-220
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±25V
Vgs(th) (Max) @ Id 5V @ 250µA
Power Dissipation (Max) 90W (Tc)
Rds On (Max) @ Id, Vgs 295mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 100 V

Goods in stock:2480

Can be shipped immediately
quantity unit price price
1 USD $2.05 USD $2.05
Total Amount: USD $2.05

Tube

quantity unit price price
1 $2.05 $2.05
50 $1.39 $69.5
100 $1.36 $136
500 $1.34 $670
1000 $1.25 $1250
2000 $1.17 $2340
5000 $1.17 $5850