STP13N65M2

Part Number
STP13N65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 10A TO220
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Package / Case TO-220-3
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Supplier Device Package TO-220
Operating Temperature 150°C (TJ)
Vgs (Max) ±25V
Power Dissipation (Max) 110W (Tc)
Drain to Source Voltage (Vdss) 650 V
Rds On (Max) @ Id, Vgs 430mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 100 V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
1 USD $2.86 USD $2.86
Total Amount: USD $2.86

Tube

quantity unit price price
1 $2.86 $2.86
50 $1.41 $70.5
100 $1.27 $127
500 $1.02 $510
1000 $0.94 $940
2000 $0.87 $1740
5000 $0.84 $4200