STP12N65M2

Part Number
STP12N65M2
Manufacturer STMicroelectronics
Other part numbers
Description POWER MOSFET
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Supplier Device Package TO-220
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V
Vgs (Max) ±25V
Drain to Source Voltage (Vdss) 650 V
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Power Dissipation (Max) 85W (Tc)
Gate Charge (Qg) (Max) @ Vgs 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 100 V

Goods in stock:1600

Can be shipped immediately