STP11N65M2

Part Number
STP11N65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 7A TO220
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-220
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Vgs (Max) ±25V
Drain to Source Voltage (Vdss) 650 V
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V
Power Dissipation (Max) 85W (Tc)
Rds On (Max) @ Id, Vgs 670mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 100 V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
1 USD $2.41 USD $2.41
Total Amount: USD $2.41

Tube

quantity unit price price
1 $2.41 $2.41
10 $1.7 $17
100 $1.2 $120
500 $0.93 $465
1000 $0.85 $850
2000 $0.78 $1560
6000 $0.75 $4500