STP10NM60N

Part Number
STP10NM60N
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 10A TO220AB
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±25V
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Power Dissipation (Max) 70W (Tc)
Rds On (Max) @ Id, Vgs 550mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 50 V

Goods in stock:2200

Can be shipped immediately
quantity unit price price
1 USD $3.28 USD $3.28
Total Amount: USD $3.28

Tube

quantity unit price price
1 $3.28 $3.28
50 $1.79 $89.5
100 $1.78 $178
500 $1.58 $790
1000 $1.46 $1460
2000 $1.4 $2800