STN2NE10L

Part Number
STN2NE10L
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 100V 1.8A SOT-223
Specification document

Product attributes

Part Status Obsolete
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)
Operating Temperature 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package / Case TO-261-4, TO-261AA
Vgs(th) (Max) @ Id 3V @ 250µA
Power Dissipation (Max) 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds 345 pF @ 25 V
Supplier Device Package SOT-223
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 5 V
Rds On (Max) @ Id, Vgs 400mOhm @ 1A, 10V

Goods in stock:1600

Can be shipped immediately