STL3N65M2

Part Number
STL3N65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 2.3A POWERFLAT
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Vgs (Max) ±25V
Drain to Source Voltage (Vdss) 650 V
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V
Package / Case 8-PowerVDFN
Supplier Device Package PowerFlat™ (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
Power Dissipation (Max) 22W (Tc)
Rds On (Max) @ Id, Vgs 1.8Ohm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 155 pF @ 100 V

Goods in stock:6744

Can be shipped immediately
quantity unit price price
1 USD $0.76 USD $0.76
Total Amount: USD $0.76

Cut Tape (CT)

quantity unit price price
1 $0.76 $0.76
10 $0.61 $6.1
100 $0.45 $45