STL18N65M2

Part Number
STL18N65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 8A POWERFLAT HV
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Operating Temperature 150°C (TJ)
Vgs (Max) ±25V
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 57W (Tc)
Package / Case 8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V
Supplier Device Package PowerFlat™ (5x6) HV
Rds On (Max) @ Id, Vgs 365mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 764 pF @ 100 V

Goods in stock:3927

Can be shipped immediately
quantity unit price price
1 USD $3.16 USD $3.16
Total Amount: USD $3.16

Cut Tape (CT)

quantity unit price price
1 $3.16 $3.16
10 $2.35 $23.5
100 $1.63 $163
500 $1.4 $700