STI6N80K5

Part Number
STI6N80K5
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 800V 4.5A I2PAK
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drain to Source Voltage (Vdss) 800 V
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Power Dissipation (Max) 85W (Tc)
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V
Supplier Device Package TO-262 (I2PAK)
Vgs(th) (Max) @ Id 5V @ 100µA
Rds On (Max) @ Id, Vgs 1.6Ohm @ 2A, 10V
Vgs (Max) 30V
Input Capacitance (Ciss) (Max) @ Vds 255 pF @ 100 V

Goods in stock:1600

Can be shipped immediately