STI6N62K3

Part Number
STI6N62K3
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 620V 5.5A I2PAK
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±30V
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Power Dissipation (Max) 90W (Tc)
Vgs(th) (Max) @ Id 4.5V @ 50µA
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V
Drain to Source Voltage (Vdss) 620 V
Input Capacitance (Ciss) (Max) @ Vds 875 pF @ 50 V

Goods in stock:1600

Can be shipped immediately