STI57N65M5

Part Number
STI57N65M5
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 42A I2PAK
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Vgs (Max) ±25V
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Drain to Source Voltage (Vdss) 650 V
Vgs(th) (Max) @ Id 5V @ 250µA
Power Dissipation (Max) 250W (Tc)
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Supplier Device Package TO-262 (I2PAK)
Rds On (Max) @ Id, Vgs 63mOhm @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 100 V

Goods in stock:1600

Can be shipped immediately