STI4N62K3

Part Number
STI4N62K3
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 620V 3.8A I2PAK
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±30V
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)
Power Dissipation (Max) 70W (Tc)
Vgs(th) (Max) @ Id 4.5V @ 50µA
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 50 V
Drain to Source Voltage (Vdss) 620 V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.9A, 10V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
2000 USD $0.53 USD $1,060.00
Total Amount: USD $1,060.00

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quantity unit price price
2000 $0.53 $1060