STI40N65M2

Part Number
STI40N65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 32A I2PAK
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature 150°C (TJ)
Vgs (Max) ±25V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 250W (Tc)
Gate Charge (Qg) (Max) @ Vgs 56.5 nC @ 10 V
Rds On (Max) @ Id, Vgs 99mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2355 pF @ 100 V

Goods in stock:2411

Can be shipped immediately
quantity unit price price
1 USD $5.10 USD $5.10
Total Amount: USD $5.10

Tube

quantity unit price price
1 $5.1 $5.1
50 $2.68 $134
100 $2.44 $244
500 $2.27 $1135