STI33N60M6

Part Number
STI33N60M6
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 25A I2PAK
Specification document

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) 190W (Tc)
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±25V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package TO-262 (I2PAK)
Gate Charge (Qg) (Max) @ Vgs 33.4 nC @ 10 V
Rds On (Max) @ Id, Vgs 125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 1515 pF @ 100 V

Goods in stock:1600

Can be shipped immediately