STI25NM60ND

Part Number
STI25NM60ND
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 21A I2PAK
Specification document

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drain to Source Voltage (Vdss) 600 V
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±25V
Power Dissipation (Max) 160W (Tc)
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Vgs(th) (Max) @ Id 5V @ 250µA
Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 50 V

Goods in stock:1600

Can be shipped immediately