STI24NM60N

Part Number
STI24NM60N
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N CH 600V 17A I2PAK
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) 125W (Tc)
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±30V
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 50 V
Rds On (Max) @ Id, Vgs 190mOhm @ 8A, 10V

Goods in stock:2581

Can be shipped immediately
quantity unit price price
1 USD $6.37 USD $6.37
Total Amount: USD $6.37

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quantity unit price price
1 $6.37 $6.37
50 $2.9 $145
100 $2.86 $286
500 $2.67 $1335
1000 $2.58 $2580