STI24N60M2

Part Number
STI24N60M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 18A I2PAK
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Power Dissipation (Max) 150W (Tc)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Vgs (Max) ±25V
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V
Supplier Device Package TO-262 (I2PAK)
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 100 V

Goods in stock:1772

Can be shipped immediately
quantity unit price price
1 USD $3.00 USD $3.00
Total Amount: USD $3.00

Tube

quantity unit price price
1 $3 $3
50 $1.49 $74.5
100 $1.47 $147
500 $1.2 $600
1000 $1.11 $1110
2000 $1.04 $2080
5000 $1.03 $5150