STI22NM60N

Part Number
STI22NM60N
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 16A I2PAK
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) 125W (Tc)
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±30V
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Rds On (Max) @ Id, Vgs 220mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1330 pF @ 50 V

Goods in stock:1600

Can be shipped immediately