STI21N65M5

Part Number
STI21N65M5
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 17A I2PAK
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Power Dissipation (Max) 125W (Tc)
Operating Temperature 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Vgs (Max) ±25V
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Drain to Source Voltage (Vdss) 650 V
Vgs(th) (Max) @ Id 5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 100 V
Rds On (Max) @ Id, Vgs 179mOhm @ 8.5A, 10V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
1000 USD $2.10 USD $2,100.00
Total Amount: USD $2,100.00

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quantity unit price price
1000 $2.1 $2100