STI20N65M5

Part Number
STI20N65M5
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 18A I2PAK
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Vgs (Max) ±25V
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Drain to Source Voltage (Vdss) 650 V
Vgs(th) (Max) @ Id 5V @ 250µA
Power Dissipation (Max) 130W (Tc)
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V
Supplier Device Package TO-262 (I2PAK)
Input Capacitance (Ciss) (Max) @ Vds 1434 pF @ 100 V

Goods in stock:2593

Can be shipped immediately
quantity unit price price
1 USD $1.54 USD $1.54
Total Amount: USD $1.54

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quantity unit price price
1 $1.54 $1.54
10 $1.5 $15
100 $1.44 $144