STI16N65M5

Part Number
STI16N65M5
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 12A I2PAK
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Operating Temperature 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±25V
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Drain to Source Voltage (Vdss) 650 V
Vgs(th) (Max) @ Id 5V @ 250µA
Power Dissipation (Max) 90W (Tc)
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 100 V
Rds On (Max) @ Id, Vgs 279mOhm @ 6A, 10V

Goods in stock:1600

Can be shipped immediately