STI13NM60N

Part Number
STI13NM60N
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 11A I2PAK
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drain to Source Voltage (Vdss) 600 V
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±25V
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Power Dissipation (Max) 90W (Tc)
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 50 V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
1000 USD $0.96 USD $960.00
Total Amount: USD $960.00

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quantity unit price price
1000 $0.96 $960