STI10N62K3
| Part Number |
STI10N62K3
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | MOSFET N-CH 620V 8.4A I2PAK |
| Specification document | Datasheet |
Product attributes
| Part Status | Obsolete | |
|---|---|---|
| Mounting Type | Through Hole | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| FET Feature | - | |
| Grade | - | |
| Qualification | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Power Dissipation (Max) | 125W (Tc) | |
| Vgs (Max) | ±30V | |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 4A, 10V | |
| Supplier Device Package | I2PAK | |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA | |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V | |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tc) | |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 50 V | |
| Drain to Source Voltage (Vdss) | 620 V |
Goods in stock:1600
Can be shipped immediately
