STH3N150-2

Part Number
STH3N150-2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 1500V 2.5A H2PAK
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Operating Temperature 150°C (TJ)
Power Dissipation (Max) 140W (Tc)
Vgs (Max) ±30V
Vgs(th) (Max) @ Id 5V @ 250µA
Drain to Source Voltage (Vdss) 1500 V
Rds On (Max) @ Id, Vgs 9Ohm @ 1.3A, 10V
Gate Charge (Qg) (Max) @ Vgs 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 939 pF @ 25 V
Supplier Device Package H2PAK
Package / Case TO-263-3, D2PAK (2 Leads + Tab), Variant

Goods in stock:5909

Can be shipped immediately
quantity unit price price
1 USD $6.41 USD $6.41
Total Amount: USD $6.41

Cut Tape (CT)

quantity unit price price
1 $6.41 $6.41
10 $4.54 $45.4
100 $3.28 $328
500 $3.16 $1580