STH185N10F3-6

Part Number
STH185N10F3-6
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 100V 180A H2PAK-6
Specification document

Product attributes

Part Status Obsolete
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Package / Case TO-263-7, D2PAK (6 Leads + Tab)
Rds On (Max) @ Id, Vgs 4.5mOhm @ 60A, 10V
Power Dissipation (Max) 315W (Tc)
Gate Charge (Qg) (Max) @ Vgs 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 6665 pF @ 25 V
Supplier Device Package H2PAK-6

Goods in stock:1600

Can be shipped immediately