STH180N10F3-2

Part Number
STH180N10F3-2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 100V 180A H2PAK-2
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Rds On (Max) @ Id, Vgs 4.5mOhm @ 60A, 10V
Power Dissipation (Max) 315W (Tc)
Gate Charge (Qg) (Max) @ Vgs 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 6665 pF @ 25 V
Supplier Device Package H2PAK-2

Goods in stock:2210

Can be shipped immediately
quantity unit price price
1 USD $6.29 USD $6.29
Total Amount: USD $6.29

Cut Tape (CT)

quantity unit price price
1 $6.29 $6.29
10 $4.57 $45.7
100 $3.3 $330
500 $3.28 $1640