STH110N7F6-2

Part Number
STH110N7F6-2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 68V 80A H2PAK-2
Specification document

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Power Dissipation (Max) 176W (Tc)
Drain to Source Voltage (Vdss) 68 V
Supplier Device Package H2PAK-2
Input Capacitance (Ciss) (Max) @ Vds 5850 pF @ 25 V
Rds On (Max) @ Id, Vgs 6.3mOhm @ 55A, 10V

Goods in stock:1600

Can be shipped immediately