STH110N10F7-2

Part Number
STH110N10F7-2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N CH 100V 110A H2PAK
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs (Max) ±20V
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Power Dissipation (Max) 150W (Tc)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Supplier Device Package H2PAK-2
Rds On (Max) @ Id, Vgs 6.5mOhm @ 55A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5117 pF @ 50 V

Goods in stock:1690

Can be shipped immediately
quantity unit price price
1 USD $4.92 USD $4.92
Total Amount: USD $4.92

Cut Tape (CT)

quantity unit price price
1 $4.92 $4.92
10 $3.25 $32.5