STFI11N65M2

Part Number
STFI11N65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 7A I2PAKFP
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Vgs (Max) ±25V
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 25W (Tc)
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V
Supplier Device Package TO-281 (I2PAKFP)
Package / Case TO-262-3 Full Pack, I2PAK
Rds On (Max) @ Id, Vgs 670mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 100 V

Goods in stock:1600

Can be shipped immediately