STF9HN65M2

Part Number
STF9HN65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 5.5A TO220FP
Specification document

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Power Dissipation (Max) 20W (Tc)
Operating Temperature 150°C (TJ)
Package / Case TO-220-3 Full Pack
Vgs (Max) ±25V
Drain to Source Voltage (Vdss) 650 V
Supplier Device Package TO-220FP
Gate Charge (Qg) (Max) @ Vgs 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 100 V
Rds On (Max) @ Id, Vgs 820mOhm @ 2.5A, 10V

Goods in stock:1612

Can be shipped immediately
quantity unit price price
1 USD $1.65 USD $1.65
Total Amount: USD $1.65

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quantity unit price price
1 $1.65 $1.65