STF11NM65N

Part Number
STF11NM65N
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 11A TO220FP
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Operating Temperature 150°C (TJ)
Package / Case TO-220-3 Full Pack
Vgs (Max) ±25V
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 25W (Tc)
Supplier Device Package TO-220FP
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 50 V
Rds On (Max) @ Id, Vgs 455mOhm @ 5.5A, 10V

Goods in stock:1600

Can be shipped immediately