STD6NM60N-1

Part Number
STD6NM60N-1
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 4.6A IPAK
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
Vgs (Max) ±25V
Power Dissipation (Max) 45W (Tc)
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Supplier Device Package TO-251 (IPAK)
Rds On (Max) @ Id, Vgs 920mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 50 V

Goods in stock:1600

Can be shipped immediately